2010 Schottky Barrier Rectifiers | High-Performance Components

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2010

AUSCD12H~AUSCD110H, AUSCD22H~AUSCD24H, AUSCD24UH, AUSCD26H, AUSCD32H~AUSCD34H, AUSCD36H, AUSCD210H, AUSCD310H, SCD24UH SCD12H~SCD14H, SCD16H~SCD110H, SCD22H~SCD24H, SCD26H, SCD36H, SCD32H~SCD34H, SCD36MH, SCD36RH, SCD36ULH, SCD53H, SCD54H, SCD56UH, SCD115H~SCD120H, SCD210H, SCD215H~SCD220H, SCD310H, SCD315H, SCD320H, SCD345H, SCD345MH, SCD345PH, SCD345UH, SCD545H, SCD545UH
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The Schottky diode also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.
When sufficient forward voltage is applied, a current flows in the forward direction. A silicon p–n diode has a typical forward voltage of 600–700 mV, while the Schottky's forward voltage is 150–450 mV. This lower forward voltage requirement allows higher switching speeds and better system efficiency.

The 2010 Schottky Barrier Rectifiers are engineered to deliver unmatched efficiency and reliability in advanced electronic systems. As a leading manufacturer in Taiwan, we focus on providing solutions that meet the stringent demands of today’s industries.

Recognized by global suppliers, the

2010

rectifiers are tailored for high-performance applications, including power management, telecommunications, and industrial equipment. Their innovative design ensures seamless integration and long-term reliability in challenging environments. Choose the

2010

Schottky Barrier Rectifiers to elevate your systems with advanced protection and efficiency. Engineered for success, this product represents the pinnacle of precision and durability.

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