1206-S
The Schottky diode also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.
When sufficient forward voltage is applied, a current flows in the forward direction. A silicon p–n diode has a typical forward voltage of 600–700 mV, while the Schottky's forward voltage is 150–450 mV. This lower forward voltage requirement allows higher switching speeds and better system efficiency.
When sufficient forward voltage is applied, a current flows in the forward direction. A silicon p–n diode has a typical forward voltage of 600–700 mV, while the Schottky's forward voltage is 150–450 mV. This lower forward voltage requirement allows higher switching speeds and better system efficiency.
The 1206-S Schottky Barrier Rectifiers deliver unmatched efficiency and reliability for modern electronics. Developed by a trusted manufacturer in Taiwan, these rectifiers are ideal for applications demanding precise voltage regulation and compact design.
Global suppliers trust the
1206-S
model for its consistent performance and exceptional durability. From telecommunications to automotive applications, these rectifiers provide robust solutions that meet diverse needs. Elevate your systems with the1206-S
Schottky Barrier Rectifiers, a product built to deliver exceptional results. Combining innovation and quality, it ensures your circuits perform flawlessly.Enquiry Now
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