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The Schottky diode also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.
When sufficient forward voltage is applied, a current flows in the forward direction. A silicon p–n diode has a typical forward voltage of 600–700 mV, while the Schottky's forward voltage is 150–450 mV. This lower forward voltage requirement allows higher switching speeds and better system efficiency.
When sufficient forward voltage is applied, a current flows in the forward direction. A silicon p–n diode has a typical forward voltage of 600–700 mV, while the Schottky's forward voltage is 150–450 mV. This lower forward voltage requirement allows higher switching speeds and better system efficiency.
The Z1PAK Schottky Barrier Rectifiers are a versatile solution for professionals seeking high-quality components. Manufactured in Taiwan, these rectifiers are built with advanced technology to ensure superior reliability and performance.
Recognized by suppliers, the
Z1PAK
model provides exceptional protection in critical systems, including power supplies, industrial machinery, and automotive electronics. Its precision engineering ensures seamless integration into various applications. Choose theZ1PAK
Schottky Barrier Rectifiers for a product that combines durability and innovation. With robust construction and consistent quality, it’s the trusted choice for global industries.Enquiry Now
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